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SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION. FEATURE
Complementary to KTC8550A.
B
KTC8050A
EPITAXIAL PLANAR NPN TRANSISTOR
C
A
N
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range
)
SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg RATING 35 30 5 800 -800 400 150 -55 150 UNIT V V V mA
L
K D
G
E
H
F
F
mA mW
M
1
2
3
C
DIM A B C D E F G H J K L M N
MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00
J
1. EMITTER 2. BASE 3. COLLECTOR
TO-92 (F)
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE(1) Classification C : 100 200, D : 150
)
TEST CONDITION VCB=15V, IE=0 IC=0.5mA, IE=0 IC=1mA, IB=0 VCE=1V, IC=50mA VCE=1V, IC=350mA IC=500mA, IB=20mA VCE=1V, IC=500mA VCE=5V, IC=10mA VCB=10V, f=1MHz, IE=0 MIN. 35 30 100 60 TYP. 120 13 MAX. 50 300 0.5 1.2 V V MHz pF UNIT nA V V
SYMBOL ICBO V(BR)CBO V(BR)CEO hFE(1) (Note) hFE(2) VCE(sat) VBE fT Cob 300
2010. 1. 28
Revision No : 2
1/2
KTC8050A
I C - V CE
COLLECTOR CURRENT I C (mA) 1k DC CURRENT GAIN h FE 800 600 400 200 0
COMMON EMITTER Ta=25 C 8
h FE - I C
1k 500 300
Ta=100 C Ta=25 C Ta=-25 C 7 6 5 4 3 2 I B =1mA 0 COMMON EMITTER VCE =1V
100 50 30
0
1
2
3
4
5
6
10
1
3
10
30
100
300
1k
2k
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (mA)
VCE(sat) - I C
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 0.5 0.3
00 =1 Ta C
I C - V BE
COLLECTOR CURRENT I C (mA) 1k 500 300 100
Ta=25 C
Ta= 100
1
COMMON EMITTER I C /I B =25
COMMON EMITTER VCE =1V
0.05 0.03
10 5 3 1
Ta=25 C Ta=100 C
0.01 1 3 10 30 100 300 1k COLLECTOR CURRENT I C (mA)
0
0.2
0.4
0.6
Ta=-2
0.1
Ta=-25 C
25 C -25 C
50 30
C
5C
0.8
1.0
1.2
BASE-EMITTER VOLTAGE V BE (V)
COLLECTOR POWER DISSIPATION PC (mW)
Pc - Ta
700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE Ta ( C)
2010.0 1. 28
Revision No : 2
2/2

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